GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc.— the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified gallium nitride (GaN) semiconductors—today announced that Seasonic Electronics Co. uses Transphorm’s high voltage (HV) GaN FETs in its new 1600 Watt (W) bridgeless totem-pole power factor correction (PFC) platform: the 1600T. The 1600T is the power supply manufacturer’s highest performing PFC platform to date at greater than 99 percent efficiency. Notably, the introduction of GaN delivers a two percent efficiency increase and 20 percent power density increase over Seasonic’s previous Silicon-based platform.
- The leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified gallium nitride (GaN) semiconductors—today announced that Seasonic Electronics Co.
- TP65H035WS 35 mΩ TO-247 unit price: 11.55 USD (sold in 1000 unit quantities) Optimal output ratings: 1.5 kW to 5.0 kW applications depending on design criteria. Application markets: Broad industrial Data centers Merchant power supplies Renewables. Supporting design resources: Datasheet.
The 1600T platform will be scaled and deployed in various catalog products targeting the Charger (e-scooters, industrial, etc.), Gaming, Server, and PC power markets.
“When researching semiconductor technologies that would enable us to reach world-leading efficiency levels, gallium nitride stood out as an attractive alternative to Silicon,” said Paul Lin, Director of Research and Development, Seasonic. “We knew the bridgeless totem-pole PFC was the topology we would use in our first high voltage GaN power platform. So, we needed power semiconductors capable of successfully capitalizing on that topology. What’s more, we wanted a GaN solution that could be backed by our standard warranty. We ultimately opted for Transphorm’s FETs within the 1600T given their proven performance and reliability that allowed us to meet those requirements.”
650V Cascode GaN FET in TO-247, TP65H035WS datasheet, TP65H035WS circuit, TP65H035WS data sheet: TRANSPHORM, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Transphorm के TP65H050WS और TP65H035WS जनरल III 650 वी GaN FETs हैं। वे कम ईएमआई, गेट शोर.
Designing with Confidence: Transphorm Q+R
The 1600T platform employs Transphorm’s TP65H035WS device, a 650 V GaN FET with an RDS(on) of 35 mΩ in a standard TO-247 package. The transistor achieves increased efficiency in hard-and soft-switched circuits, providing power systems engineers options when designing products. Further, the TP65H035WS pairs with commonly-used gate drivers to simplify designs while controlling costs.
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Transphorm prioritizes quality and reliability (Q+R) when developing its GaN platforms and FETs. An outcrop of that prioritization is increased safety for designers; Transphorm GaN typically delivers greater headroom and noise immunity when compared to other available GaN FETs. The TP65H035WS’ typical gate threshold is 4 V with a maximum gate voltage of ±20 V.
Beyond the technology itself, Transphorm offers in-depth field application support and hands on training given GaN’s relative newness in high voltage applications. Seasonic leveraged the semiconductor company’s experts to strengthen the design itself while quickening time to market.
For example, guidance provided helped Seasonic’s team ramp on use of a simple, low-cost digital signal processor (DSP) to control the totem-pole PFC. Transphorm also aided in the platform’s component selection and system layout, ensuring optimal GaN performance. Ultimately, the co-development directly impacted Seasonic’s ability to drive up thermal efficiency while increasing power output—generating a HV GaN platform capable of delivering on Seasonic’s vision.
About Seasonic Electronics
Seasonic is a truly global company. Headquartered in Taipei, Taiwan, we export our products from our factory in China to our offices in the USA, Europe, Japan, as well as to other parts of the world. As a leader in innovation, our company’s main focus is to bring the latest technology at the best possible value to all our customers, who require cutting-edge features combined with market leading performance and total reliability. The strong competition in the IT industry gives us constant challenges, which strengthen our resolve to become and stay the best. Today, the Seasonic name is the equivalent of high performance, excellence and reliability. Our design and engineering team is passionate about creating new solutions that reply to the needs of our customers and connect to the latest market trends.
About Transphorm
Transphorm (transphormusa.com) designs, manufactures, and sells the highest performance, highest reliability GaN semiconductors for high-voltage power conversion applications. Holding one of the largest Power GaN IP portfolios (1000+ issued and pending patents worldwide), Transphorm produces the industry’s only JEDEC and AEC-Q101 qualified GaN FETs. This is due to a vertically-integrated business approach, which allows for innovation at every stage: materials and device design and manufacture, fabrication, packaging, reference circuit designs, and application support.
GOLETA, Calif.--(BUSINESS WIRE Snakegamerate. )--Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified gallium nitride (GaN) semiconductors—today announced availability of its third generation (Gen III) 650-volt (V) GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications.
The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end product designs now in production or soon to be released. Gen III devices being released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages.
Transphorm in the Field = Product Development Advantages
Transphorm is one of the only GaN semiconductor companies owning each critical stage of FET development. Given this, insight gained during customer development projects along with Gen I and Gen II platforms can be applied to the GaN-on-Si technology to increase the transistor’s quality, reliability, and performance. Data is often gathered that also informs development techniques that can simplify design complexity, increase safety margin, and/or positively affect power system performance.
Research that led to Gen III produced both opportunities: increased benefits now inherent to the GaN technology itself and new design methods augmenting the FET’s performance. Further, the design and fabrication innovations enable Transphorm to reduce device price, generating even more ROI.
Technologically, the incorporation of a new MOSFET along with other design modifications enable Gen III devices to deliver:
- An increased threshold voltage (noise immunity) to 4 V from 2.1 V for Gen II, eliminating the need for a negative gate drive.
- A gate reliability rating of ±20 V; an 11 percent increase versus Gen II.
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As a result, switching is quieter, and the platform delivers performance improvement at higher current levels with simple external circuitry.
How to format ssd for mac. Regarding learned design techniques, Transphorm published elegant solutions for oscillation suppression in its app note 0009: Recommended External Circuitry for Transphorm GaN FETs. Example recommendations include the use of DC-link RC snubbers and switching-node RC snubbers that add further stability without adverse impact on efficiency. Notably, the solutions can benefit half-bridge and bridgeless totem-pole PFC topologies.
“It’s important to us to evolve our GaN technology based on customer need and real-world experience. Our Gen III FETs exemplify what’s possible when we adhere to that basic philosophy,” said Philip Zuk, Vice President of Technical Marketing, Transphorm.
“We’ve brought forth a safer, more cost-effective high-voltage GaN FET. We trust that these transistors will be seen by customers as the new power semiconductors delivering invaluable efficiency, high power handling capability and otherperformance advantages with ease of use,” added Dr. Yifeng Wu, Senior Vice President of Engineering, Transphorm.
Gen III 650 V Product Line Details
Transphorm Tp65h035ws
Availability: Currently shipping
- TP65H050WS 50 mΩ TO-247 unit price: 8.86 USD (sold in 1000 unit quantities)
- TP65H035WS 35 mΩ TO-247 unit price: 11.55 USD (sold in 1000 unit quantities)
Optimal output ratings: 1.5 kW to 5.0 kW applications depending on design criteria
Application markets:
- Broad industrial
- Data centers
- Merchant power supplies
- Renewables
Supporting design resources:
- Datasheet
- Evaluation kit
- SPICE model
- Quality white paper
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Welcome to the GaN Revolution!
Transphorm designs, manufactures, and sells the highest performance, highest reliability GaN semiconductors for high-voltage power conversion applications. Holding one of the largest Power GaN IP portfolios (1000+ issued and pending patents worldwide), Transphorm produces the industry’s only JEDEC and AEC-Q101 qualified GaN FETs. This is due to a vertically-integrated business approach, which allows for innovation at every stage: materials and device design and manufacture, fabrication, packaging, reference circuit designs, and application support. Transphorm: moving power electronics beyond Silicon limits. Website: transphormusa.com Twitter: @transphormusa